High mobility amorphous InGaZnO{sub 4} thin film transistors formed by CO{sub 2} laser spike annealing
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
- Corning Incorporated, Corning, New York 14831 (United States)
Amorphous InGaZnO{sub 4} (a-IGZO) thin film transistors (TFTs) hold great potential for large area and flexible electronics with current research focused on improving the mobility and stability. In this work, we report on properties of IGZO TFTs fabricated using laser spike annealing (LSA) with a scanned continuous wave CO{sub 2} laser. For peak annealing temperatures near 430 °C and a 1 ms dwell, TFTs exhibit saturation field-effect mobilities above 70 cm{sup 2}/V-s (V{sub on} ∼ −3 V), a value over 4 times higher than furnace-annealed control samples (∼16 cm{sup 2}/V-s). A model linking oxygen deficient defect structures with limited structural relaxation after the LSA anneal is proposed to explain the observed high mobility. This mobility is also shown to be comparable to the estimated trap-free mobility in oxide semiconductors and suggests that shallow traps can be removed by transient thermal annealing under optimized conditions.
- OSTI ID:
- 22398789
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
High mobility bottom gate InGaZnO thin film transistors with SiO{sub x} etch stopper
Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer