Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

Journal Article · Mon Mar 23 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4916550· OSTI ID:22398788

Jang, Jun Tae; Kim, Dong Myong; Choi, Sung-Jin; Park, Jozeph ^[1]; Ahn, Byung Du ^[2]; Kim, Hyun-Suk ^[3]

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1. Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of)
2. School of Electrical and Electronic Engineering, Yonsei University, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)
3. Department of Materials Science and Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of)

The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

• OSTI ID: 22398788
• Journal Information: Applied Physics Letters, Vol. 106, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER MOBILITY
DENSITY OF STATES
DIRECT CURRENT
GALLIUM COMPOUNDS
ILLUMINANCE
INDIUM COMPOUNDS
PERFORMANCE
PEROXIDES
PHASE STABILITY
RELIABILITY
SPUTTERING
STRESSES
THIN FILMS
TRANSISTORS
TRAPPING
ZINC OXIDES