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Title: Deuterium absorption from the D{sub 2}O exposure of oxidized 4H-SiC (0001), (0001{sup ¯}), and (112{sup ¯}0) surfaces

We report results on deuterium absorption on several oxidized 4H-SiC surfaces following D{sub 2}O vapor absorption. Absorption at the oxide/semiconductor interface is strongly face dependent with an order of magnitude more deuterium on the C-face and a-face than on the Si-face, in contrast to the bulk of the oxides which show essentially no face dependence. Annealing in NO gas produces a large reduction in interfacial deuterium absorption in all cases. The reduction of the positive charge at the interface scales linearly with the interface D content. These results also scale with the variation in interface trap density (D{sub it}) and mobility on the three faces after wet oxidation annealing.
Authors:
 [1] ; ;  [1] ;  [2] ; ; ;  [3] ;  [1] ;  [4] ;  [5]
  1. Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States)
  2. (United States)
  3. Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)
  4. (Israel)
  5. Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)
Publication Date:
OSTI Identifier:
22398787
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ANNEALING; CRYSTAL STRUCTURE; DEUTERIUM; HEAVY WATER; INTERFACES; MOBILITY; NITRIC OXIDE; OXIDATION; SEMICONDUCTOR MATERIALS; SILICON; SILICON CARBIDES; SURFACES; TRAPS; VAPORS; VARIATIONS