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Title: Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications

Using the biomaterial of Al-chelated gelatin (ACG) prepared by sol-gel method in the ITO/ACG/ITO structure, a highly transparent resistive random access memory (RRAM) was obtained. The transmittance of the fabricated device is approximately 83% at 550 nm while that of Al/gelatin/ITO is opaque. As to the ITO/gelatin/ITO RRAM, no resistive switching behavior can be seen. The ITO/ACG/ITO RRAM shows high ON/OFF current ratio (>10{sup 5}), low operation voltage, good uniformity, and retention characteristics at room temperature and 85 °C. The mechanism of the ACG-based memory devices is presented. The enhancement of these electrical properties can be attributed to the chelate effect of Al ions with gelatin. Results show that transparent ACG-based memory devices possess the potential for next-generation resistive memories and bio-electronic applications.
Authors:
;  [1]
  1. Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng-Kung University, Tainan 701 Taiwan (China)
Publication Date:
OSTI Identifier:
22398784
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; ALUMINIUM IONS; APPROXIMATIONS; CHELATES; ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; GELATIN; INDIUM COMPOUNDS; MEMORY DEVICES; RANDOMNESS; RETENTION; SOL-GEL PROCESS; SOLUTIONS; TEMPERATURE RANGE 0273-0400 K; TITANIUM OXIDES; VOLATILITY