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Title: Negative circular polarization as a universal property of quantum dots

This paper shows that negative circular polarization, a spin flip of polarized carriers resulting in emission of opposite helicity, can be observed in undoped, n-doped, and p-doped InAs/GaAs quantum dots. These results contradict the usual interpretation of the effect. We show using power dependent and time resolved spectroscopy that the generation of negative circular polarization correlates with excited state emission. Furthermore, a longer spin lifetime of negatively polarized excitons is observed where emission is largely ground state in character.
Authors:
; ;  [1]
  1. The Blackett Laboratory, Department of Physics, Imperial College London, Prince Consort Road, London SW7 2AZ (United Kingdom)
Publication Date:
OSTI Identifier:
22398777
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CHARGE CARRIERS; DOPED MATERIALS; EXCITED STATES; EXCITONS; GALLIUM ARSENIDES; GROUND STATES; HELICITY; INDIUM ARSENIDES; LIFETIME; POLARIZATION; QUANTUM DOTS; SPIN; SPIN FLIP; TIME RESOLUTION