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Title: Metal-organic vapor-phase epitaxy-grown ultra-low density InGaAs/GaAs quantum dots exhibiting cascaded single-photon emission at 1.3 μm

By metal-organic vapor-phase epitaxy, we have fabricated InGaAs quantum dots on GaAs substrate with an ultra-low lateral density (<10{sup 7} cm{sup −2}). The photoluminescence emission from the quantum dots is shifted to the telecom O-band at 1.31 μm by an InGaAs strain reducing layer. In time-resolved measurements, we find fast decay times for exciton (∼600 ps) and biexciton (∼300 ps). We demonstrate triggered single-photon emission (g{sup (2)}(0)=0.08) as well as cascaded emission from the biexciton decay. Our results suggest that these quantum dots can compete with their counterparts grown by state-of-the-art molecular beam epitaxy.
Authors:
; ; ; ; ;  [1]
  1. Institut für Halbleiteroptik und Funktionelle Grenzflächen, University of Stuttgart, Allmandring 3, 70569 Stuttgart (Germany)
Publication Date:
OSTI Identifier:
22398774
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; DENSITY; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM DOTS; STRAINS; SUBSTRATES; TIME RESOLUTION; VAPOR PHASE EPITAXY