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Title: Light emission from conductive paths in nanocrystalline CdSe embedded Zr-doped HfO{sub 2} high-k stack

Electrical and optical properties of the solid state incandescent light emitting devices made of zirconium doped hafnium oxide high-k films with and without an embedded nanocrystalline CdSe layer on the p-type Si wafer have been studied. The broad band white light was emitted from nano sized conductive paths through the thermal excitation mechanism. Conductive paths formed from the dielectric breakdown have been confirmed from scanning electron microscopic and atomic force microscopic images and the secondary ion mass spectrometric elemental profiles. Si was diffused from the wafer to the device surface through the conductive path during the high temperature light emission process. There are many potential applications of this type of device.
Authors:
;  [1]
  1. Thin Film Nano and Microelectronics Research Laboratory, Artie McFerrin Department of Chemical Engineering, Texas A and M University, College Station, Texas 77843-3122 (United States)
Publication Date:
OSTI Identifier:
22398758
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM SELENIDES; CRYSTALS; DIELECTRIC MATERIALS; DOPED MATERIALS; EXCITATION; FILMS; HAFNIUM OXIDES; IMAGES; LAYERS; MASS SPECTROSCOPY; NANOSTRUCTURES; OPTICAL PROPERTIES; POTENTIALS; SCANNING ELECTRON MICROSCOPY; SOLIDS; SURFACES; VISIBLE RADIATION; ZIRCONIUM