Performance enhancement of perovskite solar cells with Mg-doped TiO{sub 2} compact film as the hole-blocking layer
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, Department of Electronic Science and Technology, School of Physics and Technology, Wuhan University, Wuhan 430072 (China)
- School of Physics and Electronic-Information Engineering, Hubei Engineering University, Xiaogan 432000 (China)
In this letter, we report perovskite solar cells with thin dense Mg-doped TiO{sub 2} as hole-blocking layers (HBLs), which outperform cells using TiO{sub 2} HBLs in several ways: higher open-circuit voltage (V{sub oc}) (1.08 V), power conversion efficiency (12.28%), short-circuit current, and fill factor. These properties improvements are attributed to the better properties of Mg-modulated TiO{sub 2} as compared to TiO{sub 2} such as better optical transmission properties, upshifted conduction band minimum (CBM) and downshifted valence band maximum (VBM), better hole-blocking effect, and higher electron life time. The higher-lying CBM due to the modulation with wider band gap MgO and the formation of magnesium oxide and magnesium hydroxides together resulted in an increment of V{sub oc}. In addition, the Mg-modulated TiO{sub 2} with lower VBM played a better role in the hole-blocking. The HBL with modulated band position provided better electron transport and hole blocking effects within the device.
- OSTI ID:
- 22398756
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
30 DIRECT ENERGY CONVERSION
CHANNELING
COMPARATIVE EVALUATIONS
DEPLETION LAYER
DOPED MATERIALS
EFFICIENCY
ELECTRIC POTENTIAL
ELECTRONS
ENERGY CONVERSION
FILL FACTORS
FILMS
HOLES
MAGNESIUM HYDROXIDES
MAGNESIUM OXIDES
MODULATION
PERFORMANCE
PEROVSKITE
SOLAR CELLS
TITANIUM OXIDES
VALENCE