InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer

Journal Article · Mon Mar 23 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4916270· OSTI ID:22398754

Gu, Y.; Ma, Y. J.; Zhou, L.; Chen, X. Y.; Xi, S. P.; Du, B. ^[1]

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1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

This work reports on up to 2.9 μm lasing at 230 K of InP-based type-I quantum well lasers. This record long wavelength lasing is achieved by applying InP-based Sb-free structures with eight periods of strain-compensated InAs quantum wells grown on metamorphic In{sub 0.8}Al{sub 0.2}As template layers. The continuous-wave threshold current density is 797 A/cm{sup 2} and the idealized extrapolated threshold current density for infinite cavity length is as low as 58 A/cm{sup 2} per quantum well at 120 K. This scheme is a promising pathway for extending the wavelength range of type-I quantum well lasers on InP substrates.

• OSTI ID: 22398754
• Journal Information: Applied Physics Letters, Vol. 106, Issue 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM ARSENIDES
BUFFERS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LENGTH
QUANTUM WELLS
SOLID STATE LASERS
STRAINS
SUBSTRATES
THRESHOLD CURRENT
WAVELENGTHS