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Title: InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer

This work reports on up to 2.9 μm lasing at 230 K of InP-based type-I quantum well lasers. This record long wavelength lasing is achieved by applying InP-based Sb-free structures with eight periods of strain-compensated InAs quantum wells grown on metamorphic In{sub 0.8}Al{sub 0.2}As template layers. The continuous-wave threshold current density is 797 A/cm{sup 2} and the idealized extrapolated threshold current density for infinite cavity length is as low as 58 A/cm{sup 2} per quantum well at 120 K. This scheme is a promising pathway for extending the wavelength range of type-I quantum well lasers on InP substrates.
Authors:
; ; ; ; ; ;  [1]
  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
Publication Date:
OSTI Identifier:
22398754
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 12; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM ARSENIDES; BUFFERS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LENGTH; QUANTUM WELLS; SOLID STATE LASERS; STRAINS; SUBSTRATES; THRESHOLD CURRENT; WAVELENGTHS