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Title: Properties of CsI, CsBr and GaAs thin films grown by pulsed laser deposition

CsI, CsBr and GaAs thin films have been grown by pulsed laser deposition on glass substrates. The morphology and structure of the films have been studied using X-ray diffraction and scanning electron microscopy. The CsI and CsBr films were identical in stoichiometry to the respective targets and had a polycrystalline structure. Increasing the substrate temperature led to an increase in the density of the films. All the GaAs films differed in stoichiometry from the target. An explanation was proposed for this fact. The present results demonstrate that, when the congruent transport condition is not fulfilled, films identical in stoichiometry to targets can be grown by pulsed laser deposition in the case of materials with a low melting point and thermal conductivity. (interaction of laser radiation with matter)
Authors:
; ;  [1] ; ;  [2]
  1. A M Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
  2. Fiber Optics Research Center, Russian Academy of Sciences, Moscow (Russian Federation)
Publication Date:
OSTI Identifier:
22395809
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 44; Journal Issue: 9; Other Information: Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CESIUM BROMIDES; CESIUM IODIDES; ENERGY BEAM DEPOSITION; GALLIUM ARSENIDES; LASER RADIATION; MELTING POINTS; POLYCRYSTALS; PULSED IRRADIATION; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; THERMAL CONDUCTIVITY; THIN FILMS; X-RAY DIFFRACTION