Properties of CsI, CsBr and GaAs thin films grown by pulsed laser deposition

Brendel, V M; Garnov, S V; Yagafarov, T F; Iskhakova, L D; Ermakov, R P

doi:10.1070/QE2014V044N09ABEH015330

Title: Properties of CsI, CsBr and GaAs thin films grown by pulsed laser deposition

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Abstract

CsI, CsBr and GaAs thin films have been grown by pulsed laser deposition on glass substrates. The morphology and structure of the films have been studied using X-ray diffraction and scanning electron microscopy. The CsI and CsBr films were identical in stoichiometry to the respective targets and had a polycrystalline structure. Increasing the substrate temperature led to an increase in the density of the films. All the GaAs films differed in stoichiometry from the target. An explanation was proposed for this fact. The present results demonstrate that, when the congruent transport condition is not fulfilled, films identical in stoichiometry to targets can be grown by pulsed laser deposition in the case of materials with a low melting point and thermal conductivity. (interaction of laser radiation with matter)

Authors:

Brendel, V M; Garnov, S V; Yagafarov, T F ^[1]; Iskhakova, L D; Ermakov, R P ^[2]

A M Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
Fiber Optics Research Center, Russian Academy of Sciences, Moscow (Russian Federation)

Publication Date:: Tue Sep 30 00:00:00 EDT 2014

OSTI Identifier:: 22395809

Resource Type:: Journal Article

Journal Name:: Quantum Electronics (Woodbury, N.Y.)

Additional Journal Information:: Journal Volume: 44; Journal Issue: 9; Other Information: Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7818

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CESIUM BROMIDES; CESIUM IODIDES; ENERGY BEAM DEPOSITION; GALLIUM ARSENIDES; LASER RADIATION; MELTING POINTS; POLYCRYSTALS; PULSED IRRADIATION; SCANNING ELECTRON MICROSCOPY; STOICHIOMETRY; THERMAL CONDUCTIVITY; THIN FILMS; X-RAY DIFFRACTION

Citation Formats


                    Brendel, V M, Garnov, S V, Yagafarov, T F, Iskhakova, L D, and Ermakov, R P. Properties of CsI, CsBr and GaAs thin films grown by pulsed laser deposition.  United States: N. p., 2014. 
        Web.  doi:10.1070/QE2014V044N09ABEH015330.

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                    Brendel, V M, Garnov, S V, Yagafarov, T F, Iskhakova, L D, & Ermakov, R P. Properties of CsI, CsBr and GaAs thin films grown by pulsed laser deposition.  United States.  https://doi.org/10.1070/QE2014V044N09ABEH015330

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                    Brendel, V M, Garnov, S V, Yagafarov, T F, Iskhakova, L D, and Ermakov, R P. 2014.  
        "Properties of CsI, CsBr and GaAs thin films grown by pulsed laser deposition".  United States.  https://doi.org/10.1070/QE2014V044N09ABEH015330.

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@article{osti_22395809,

  title        = {Properties of CsI, CsBr and GaAs thin films grown by pulsed laser deposition},

  author       = {Brendel, V M and Garnov, S V and Yagafarov, T F and Iskhakova, L D and Ermakov, R P},

  abstractNote = {CsI, CsBr and GaAs thin films have been grown by pulsed laser deposition on glass substrates. The morphology and structure of the films have been studied using X-ray diffraction and scanning electron microscopy. The CsI and CsBr films were identical in stoichiometry to the respective targets and had a polycrystalline structure. Increasing the substrate temperature led to an increase in the density of the films. All the GaAs films differed in stoichiometry from the target. An explanation was proposed for this fact. The present results demonstrate that, when the congruent transport condition is not fulfilled, films identical in stoichiometry to targets can be grown by pulsed laser deposition in the case of materials with a low melting point and thermal conductivity. (interaction of laser radiation with matter)},

  doi          = {10.1070/QE2014V044N09ABEH015330},

  url          = {https://www.osti.gov/biblio/22395809},
  journal      = {Quantum Electronics (Woodbury, N.Y.)},

  issn         = {1063-7818},

  number       = 9,

  volume       = 44,

  place        = {United States},

  year         = {Tue Sep 30 00:00:00 EDT 2014},

  month        = {Tue Sep 30 00:00:00 EDT 2014}

}

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