skip to main content

Title: Calculation of output characteristics of semiconductor quantum-well lasers with account for both electrons and holes

Using an extended theoretical model, which includes the rate equations for both electrons and holes, we have studied the output characteristics of semiconductor quantum-well lasers. We have found non-trivial dependences of electron and hole concentrations in the waveguide region of the laser on the capture velocities of both types of carriers from the waveguide region into the quantum well. We have obtained the dependences of the internal differential quantum efficiency and optical output power of the laser on the capture velocities of electrons and holes. An increase in the capture velocities has been shown to result in suppression of parasitic recombination in the waveguide region and therefore in a substantial increase in the quantum efficiency and output power. (lasers)
Authors:
;  [1] ;  [2]
  1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)
  2. Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University,207 Holden Hall - M/C 0237, Blacksburg, VA 24061 (United States)
Publication Date:
OSTI Identifier:
22395802
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 44; Journal Issue: 9; Other Information: Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; ELECTRONS; HOLES; QUANTUM EFFICIENCY; QUANTUM WELLS; REACTION KINETICS; SEMICONDUCTOR LASERS; WAVEGUIDES