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Title: Theoretical analysis of multiple quantum-well, slow-light devices under applied external fields using a fully analytical model in fractional dimension

We report a theoretical study of optical properties of AlGaAs/GaAs multiple quantum-well (MQW), slow-light devices based on excitonic population oscillations under applied external magnetic and electric fields using an analytical model for complex dielectric constant of Wannier excitons in fractional dimension. The results are shown for quantum wells (QWs) of different width. The significant characteristics of the exciton in QWs such as exciton energy and exciton oscillator strength (EOS) can be varied by application of external magnetic and electric fields. It is found that a higher bandwidth and an appropriate slow-down factor (SDF) can be achieved by changing the QW width during the fabrication process and by applying magnetic and electric fields during device functioning, respectively. It is shown that a SDF of 10{sup 5} is obtained at best. (slowing of light)
Authors:
;  [1]
  1. Photonics Research Laboratory, Electrical Engineering Department, AmirKabir University of Technology, Hafez Ave., Tehran (Iran, Islamic Republic of)
Publication Date:
OSTI Identifier:
22395801
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 45; Journal Issue: 1; Other Information: Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; ELECTRIC FIELDS; EXCITONS; GALLIUM ARSENIDES; OPTICAL PROPERTIES; OSCILLATIONS; OSCILLATOR STRENGTHS; PERMITTIVITY; QUANTUM WELLS