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Title: Laser generation in polycrystalline Cr{sup 2+}:ZnSe with undoped faces

An original method has been suggested for producing polycrystalline Cr{sup 2+}:ZnSe samples with undoped faces. Generation characteristics of a Cr{sup 2+}:ZnSe laser are studied under pulse-periodic pumping by a Tm{sup 3+}:YLF-laser. The efficiency of converting the pump radiation into laser generation at a wavelength of 2350 nm is 20%. Cr{sup 2+}:ZnSe samples exhibit high resistance to surface breakdown. (lasers)
Authors:
; ; ;  [1] ;  [2]
  1. G.G.Devyatykh Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences, Nizhnii Novgorod (Russian Federation)
  2. N. I. Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22395800
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 45; Journal Issue: 1; Other Information: Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BREAKDOWN; CHROMIUM IONS; EFFICIENCY; NEAR INFRARED RADIATION; POLYCRYSTALS; PULSES; PUMPING; SEMICONDUCTOR LASERS; THULIUM IONS; ZINC SELENIDES