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Title: Luminescence properties of IR-emitting bismuth centres in SiO{sub 2}-based glasses in the UV to near-IR spectral region

We have studied UV excitation spectra of IR luminescence in bismuth-doped glasses of various compositions and obtained energy level diagrams of IR-emitting bismuth-related active centres (BACs) associated with silicon and germanium atoms up to ∼5.2 eV over the ground level. A possible energy level diagram of the BACs in phosphosilicate glass has been proposed. The UV excitation peaks for the IR luminescence of the BACs in the glasses have been shown to considerably overlap with absorption bands of the Bi{sup 3+} ion, suggesting that Bi{sup 3+} may participate in BAC formation. (optical fibres)
Authors:
; ; ;  [1] ;  [2] ; ;  [3] ;  [4] ;  [5]
  1. Fiber Optics Research Center, Russian Academy of Sciences, Moscow (Russian Federation)
  2. Moscow Institute of Physics and Technology (State University), Dolgoprudnyi, Moscow Region (Russian Federation)
  3. G.G.Devyatykh Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences, Nizhnii Novgorod (Russian Federation)
  4. A M Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
  5. N.P. Ogarev Mordovia State University, Physics and Chemistry Institute, Saransk (Russian Federation)
Publication Date:
OSTI Identifier:
22395795
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 45; Journal Issue: 1; Other Information: Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BISMUTH; BISMUTH IONS; DOPED MATERIALS; ENERGY LEVELS; EV RANGE 01-10; EXCITATION; GERMANIUM; GLASS; GROUND LEVEL; LUMINESCENCE; NEAR INFRARED RADIATION; SILICA; SILICON; SILICON OXIDES; ULTRAVIOLET SPECTRA