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Title: Bulk photoemission from metal films and nanoparticles

Internal emission of photoelectrons from metal films and nanoparticles (nanowires and nanospheres) into a semiconductor matrix is studied theoretically by taking into account the jump of the effective electron mass at the metal – semiconductor interface and the cooling effect of hot electrons due to electron – electron collisions in the metal. The internal quantum efficiency of photoemission for the film and nanoparticles of two types (nanospheres and nanowires) is calculated. It is shown that the reduction of the effective mass of the electron during its transition from metal to semiconductor may lead to a significant (orders of magnitude and higher) decrease in the internal quantum efficiency of bulk photoemission. (nanostructures)
Authors:
 [1] ;  [2] ; ;  [3] ;  [4]
  1. Research Institute of Scientific Instruments, 'Rosatom'' State Atomic Energy Corporation (Russian Federation)
  2. Technical University of Denmark (Denmark)
  3. P N Lebedev Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
  4. St. Petersburg State Politechnical University, St. Petersburg (Russian Federation)
Publication Date:
OSTI Identifier:
22395794
Resource Type:
Journal Article
Resource Relation:
Journal Name: Quantum Electronics (Woodbury, N.Y.); Journal Volume: 45; Journal Issue: 1; Other Information: Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COOLING; EFFECTIVE MASS; ELECTRON COLLISIONS; ELECTRONS; FILMS; NANOPARTICLES; NANOWIRES; PHOTOEMISSION; QUANTUM EFFICIENCY; SEMICONDUCTOR MATERIALS