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Title: Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.
Authors:
; ;  [1] ;  [1] ;  [2]
  1. School of Physics, Shandong University, Jinan 250100 (China)
  2. (United Kingdom)
Publication Date:
OSTI Identifier:
22395779
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANODES; BREAKDOWN; ELECTRIC POTENTIAL; GALLIUM COMPOUNDS; HEAT TREATMENTS; INDIUM COMPOUNDS; LAYERS; MAGNETRONS; PLASTICS; RADIOWAVE RADIATION; SCHOTTKY BARRIER DIODES; SPUTTERING; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; TRANSISTORS; ZINC OXIDES