skip to main content

SciTech ConnectSciTech Connect

Title: Evaluation of pulsed laser annealing for flexible multilayer MoS{sub 2} transistors

To realize the proper electrical characteristics of field-effect transistors, the quality of the contact and interface must be improved because they can substantially distort the extracted mobility, especially for materials with low densities of states like molybdenum disulfide (MoS{sub 2}). We show that mechanically flexible MoS{sub 2} thin-film transistors (TFTs) with selectively laser annealed source/drain electrodes achieve enhanced device performance without plastic deformation including higher field-effect mobility (from 19.59 to 45.91 cm{sup 2} V{sup −1} s{sup −1}) in the linear regime, decreased subthreshold swing, and enhanced current saturation. Furthermore, numerical thermal simulations, measured current-voltage characteristics, and contact-free mobility extracted from the Y-function method suggest that the enhanced performance originated from a decrease in the Schottky barrier effect at the contact and an improvement of the channel interface. These results demonstrate that picosecond laser annealing can be a promising technology for building high performance flexible MoS{sub 2} TFTs in flexible/stretchable circuitry, which should be processed at low temperatures.
Authors:
;  [1] ;  [2] ;  [3]
  1. Department of Mechanical Engineering, University of California, Berkeley, California 94720-1740 (United States)
  2. Department of Electronics and Radio Engineering, Kyung Hee University, Yongin, Gyeonggi 446-701 (Korea, Republic of)
  3. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)
Publication Date:
OSTI Identifier:
22395772
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; COMPUTERIZED SIMULATION; DENSITY OF STATES; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRODES; EVALUATION; FIELD EFFECT TRANSISTORS; INTERFACES; LASERS; LAYERS; MOBILITY; MOLYBDENUM SULFIDES; PERFORMANCE; PLASTICITY; TEMPERATURE DEPENDENCE; THIN FILMS