Defect-engineered GaN:Mg nanowire arrays for overall water splitting under violet light

Journal Article · Mon Mar 16 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4915609· OSTI ID:22395768

Kibria, M. G.; Chowdhury, F. A.; Zhao, S.; Trudeau, M. L. ^[1]; Guo, H. ^[2]

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1. Science des Matériaux, IREQ, Hydro-Québec 1800 Boul. Lionel-Boulet, Varennes, Quebec J3X 1S1 (Canada)
2. Department of Physics, Centre for the Physics of Materials, McGill University, 3600 University Street, Montreal, Quebec H3A 2T8 (Canada)

We report that by engineering the intra-gap defect related energy states in GaN nanowire arrays using Mg dopants, efficient and stable overall neutral water splitting can be achieved under violet light. Overall neutral water splitting on Rh/Cr{sub 2}O{sub 3} co-catalyst decorated Mg doped GaN nanowires is demonstrated with intra-gap excitation up to 450 nm. Through optimized Mg doping, the absorbed photon conversion efficiency of GaN nanowires reaches ∼43% at 375–450 nm, providing a viable approach to extend the solar absorption of oxide and non-oxide photocatalysts.

• OSTI ID: 22395768
• Journal Information: Applied Physics Letters, Vol. 106, Issue 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
CHROMIUM OXIDES
CONVERSION
DOPED MATERIALS
ENERGY EFFICIENCY
ENERGY GAP
EXCITATION
GALLIUM NITRIDES
MAGNESIUM
NANOWIRES
PHOTONS
RHODIUM
VISIBLE RADIATION
WATER