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Title: Defect-engineered GaN:Mg nanowire arrays for overall water splitting under violet light

We report that by engineering the intra-gap defect related energy states in GaN nanowire arrays using Mg dopants, efficient and stable overall neutral water splitting can be achieved under violet light. Overall neutral water splitting on Rh/Cr{sub 2}O{sub 3} co-catalyst decorated Mg doped GaN nanowires is demonstrated with intra-gap excitation up to 450 nm. Through optimized Mg doping, the absorbed photon conversion efficiency of GaN nanowires reaches ∼43% at 375–450 nm, providing a viable approach to extend the solar absorption of oxide and non-oxide photocatalysts.
Authors:
; ; ;  [1] ;  [2] ;  [3]
  1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9 (Canada)
  2. Science des Matériaux, IREQ, Hydro-Québec 1800 Boul. Lionel-Boulet, Varennes, Quebec J3X 1S1 (Canada)
  3. Department of Physics, Centre for the Physics of Materials, McGill University, 3600 University Street, Montreal, Quebec H3A 2T8 (Canada)
Publication Date:
OSTI Identifier:
22395768
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; CHROMIUM OXIDES; CONVERSION; DOPED MATERIALS; ENERGY EFFICIENCY; ENERGY GAP; EXCITATION; GALLIUM NITRIDES; MAGNESIUM; NANOWIRES; PHOTONS; RHODIUM; VISIBLE RADIATION; WATER