Holmium hafnate: An emerging electronic device material
- Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377 (United States)
We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho{sub 2}Hf{sub 2}O{sub 7} (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ∼20 and very low dielectric loss of ∼0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap E{sub g} of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.
- OSTI ID:
- 22395760
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITORS
CHARGE TRANSPORT
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
ELECTRONIC EQUIPMENT
ENERGY GAP
EV RANGE
FREQUENCY DEPENDENCE
HAFNIUM OXIDES
HOLMIUM COMPOUNDS
KHZ RANGE
LEAKAGE CURRENT
PERMITTIVITY
POTENTIALS
RELAXATION LOSSES
SEMICONDUCTOR DEVICES
SILICON
SPECTRAL REFLECTANCE