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Title: Holmium hafnate: An emerging electronic device material

We report structural, optical, charge transport, and temperature properties as well as the frequency dependence of the dielectric constant of Ho{sub 2}Hf{sub 2}O{sub 7} (HHO) which make this material desirable as an alternative high-k dielectric for future silicon technology devices. A high dielectric constant of ∼20 and very low dielectric loss of ∼0.1% are temperature and voltage independent at 100 kHz near ambient conditions. The Pt/HHO/Pt capacitor exhibits exceptionally low Schottky emission-based leakage currents. In combination with the large observed bandgap E{sub g} of 5.6 eV, determined by diffuse reflectance spectroscopy, our results reveal fundamental physics and materials science of the HHO metal oxide and its potential application as a high-k dielectric for the next generation of complementary metal-oxide-semiconductor devices.
Authors:
; ; ; ; ;  [1] ;  [1] ;  [2]
  1. Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 70377, San Juan, Puerto Rico 00936-8377 (United States)
  2. (United Kingdom)
Publication Date:
OSTI Identifier:
22395760
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITORS; CHARGE TRANSPORT; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRONIC EQUIPMENT; ENERGY GAP; EV RANGE; FREQUENCY DEPENDENCE; HAFNIUM OXIDES; HOLMIUM COMPOUNDS; KHZ RANGE; LEAKAGE CURRENT; PERMITTIVITY; POTENTIALS; RELAXATION LOSSES; SEMICONDUCTOR DEVICES; SILICON; SPECTRAL REFLECTANCE