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Title: Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films

The electron field emission (EFE) properties of ultrananocrystalline diamond films were markedly improved via the bias-enhanced plasma post-treatment (bep) process. The bep-process induced the formation of hybrid-granular structure of the diamond (bep-HiD) films with abundant nano-graphitic phase along the grain boundaries that increased the conductivity of the films. Moreover, the utilization of Au-interlayer can effectively suppress the formation of resistive amorphous-carbon (a-C) layer, thereby enhancing the transport of electrons crossing the diamond-to-Si interface. Therefore, bep-HiD/Au/Si films exhibit superior EFE properties with low turn-on field of E{sub 0} = 2.6 V/μm and large EFE current density of J{sub e} = 3.2 mA/cm{sup 2} (at 5.3 V/μm)
Authors:
;  [1] ; ;  [2] ;  [3] ;  [4]
  1. Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)
  2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China)
  3. Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan (China)
  4. Department of Physics, Tamkang University, Tamsui 251, Taiwan (China)
Publication Date:
OSTI Identifier:
22395747
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENT DENSITY; DIAMONDS; ELECTRIC CONDUCTIVITY; ELECTRONS; FIELD EMISSION; GOLD; GRAIN BOUNDARIES; GRAPHITE; INTERFACES; LAYERS; PLASMA; SILICON; THIN FILMS