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Title: Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films

Abstract

The electron field emission (EFE) properties of ultrananocrystalline diamond films were markedly improved via the bias-enhanced plasma post-treatment (bep) process. The bep-process induced the formation of hybrid-granular structure of the diamond (bep-HiD) films with abundant nano-graphitic phase along the grain boundaries that increased the conductivity of the films. Moreover, the utilization of Au-interlayer can effectively suppress the formation of resistive amorphous-carbon (a-C) layer, thereby enhancing the transport of electrons crossing the diamond-to-Si interface. Therefore, bep-HiD/Au/Si films exhibit superior EFE properties with low turn-on field of E{sub 0} = 2.6 V/μm and large EFE current density of J{sub e} = 3.2 mA/cm{sup 2} (at 5.3 V/μm)

Authors:
;  [1]; ;  [2];  [3]
  1. Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)
  2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China)
  3. Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan (China)
Publication Date:
OSTI Identifier:
22395747
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENT DENSITY; DIAMONDS; ELECTRIC CONDUCTIVITY; ELECTRONS; FIELD EMISSION; GOLD; GRAIN BOUNDARIES; GRAPHITE; INTERFACES; LAYERS; PLASMA; SILICON; THIN FILMS

Citation Formats

Saravanan, A., Huang, B. R., Sankaran, K. J., Tai, N. H., Dong, C. L., and Lin, I. N., E-mail: inanlin@mail.tku.edu.tw. Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films. United States: N. p., 2015. Web. doi:10.1063/1.4915488.
Saravanan, A., Huang, B. R., Sankaran, K. J., Tai, N. H., Dong, C. L., & Lin, I. N., E-mail: inanlin@mail.tku.edu.tw. Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films. United States. https://doi.org/10.1063/1.4915488
Saravanan, A., Huang, B. R., Sankaran, K. J., Tai, N. H., Dong, C. L., and Lin, I. N., E-mail: inanlin@mail.tku.edu.tw. 2015. "Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films". United States. https://doi.org/10.1063/1.4915488.
@article{osti_22395747,
title = {Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films},
author = {Saravanan, A. and Huang, B. R. and Sankaran, K. J. and Tai, N. H. and Dong, C. L. and Lin, I. N., E-mail: inanlin@mail.tku.edu.tw},
abstractNote = {The electron field emission (EFE) properties of ultrananocrystalline diamond films were markedly improved via the bias-enhanced plasma post-treatment (bep) process. The bep-process induced the formation of hybrid-granular structure of the diamond (bep-HiD) films with abundant nano-graphitic phase along the grain boundaries that increased the conductivity of the films. Moreover, the utilization of Au-interlayer can effectively suppress the formation of resistive amorphous-carbon (a-C) layer, thereby enhancing the transport of electrons crossing the diamond-to-Si interface. Therefore, bep-HiD/Au/Si films exhibit superior EFE properties with low turn-on field of E{sub 0} = 2.6 V/μm and large EFE current density of J{sub e} = 3.2 mA/cm{sup 2} (at 5.3 V/μm)},
doi = {10.1063/1.4915488},
url = {https://www.osti.gov/biblio/22395747}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 11,
volume = 106,
place = {United States},
year = {Mon Mar 16 00:00:00 EDT 2015},
month = {Mon Mar 16 00:00:00 EDT 2015}
}