Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films
Abstract
The electron field emission (EFE) properties of ultrananocrystalline diamond films were markedly improved via the bias-enhanced plasma post-treatment (bep) process. The bep-process induced the formation of hybrid-granular structure of the diamond (bep-HiD) films with abundant nano-graphitic phase along the grain boundaries that increased the conductivity of the films. Moreover, the utilization of Au-interlayer can effectively suppress the formation of resistive amorphous-carbon (a-C) layer, thereby enhancing the transport of electrons crossing the diamond-to-Si interface. Therefore, bep-HiD/Au/Si films exhibit superior EFE properties with low turn-on field of E{sub 0} = 2.6 V/μm and large EFE current density of J{sub e} = 3.2 mA/cm{sup 2} (at 5.3 V/μm)
- Authors:
-
- Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)
- Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China)
- Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan (China)
- Publication Date:
- OSTI Identifier:
- 22395747
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 106; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENT DENSITY; DIAMONDS; ELECTRIC CONDUCTIVITY; ELECTRONS; FIELD EMISSION; GOLD; GRAIN BOUNDARIES; GRAPHITE; INTERFACES; LAYERS; PLASMA; SILICON; THIN FILMS
Citation Formats
Saravanan, A., Huang, B. R., Sankaran, K. J., Tai, N. H., Dong, C. L., and Lin, I. N., E-mail: inanlin@mail.tku.edu.tw. Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films. United States: N. p., 2015.
Web. doi:10.1063/1.4915488.
Saravanan, A., Huang, B. R., Sankaran, K. J., Tai, N. H., Dong, C. L., & Lin, I. N., E-mail: inanlin@mail.tku.edu.tw. Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films. United States. https://doi.org/10.1063/1.4915488
Saravanan, A., Huang, B. R., Sankaran, K. J., Tai, N. H., Dong, C. L., and Lin, I. N., E-mail: inanlin@mail.tku.edu.tw. 2015.
"Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films". United States. https://doi.org/10.1063/1.4915488.
@article{osti_22395747,
title = {Bias-enhanced post-treatment process for enhancing the electron field emission properties of ultrananocrystalline diamond films},
author = {Saravanan, A. and Huang, B. R. and Sankaran, K. J. and Tai, N. H. and Dong, C. L. and Lin, I. N., E-mail: inanlin@mail.tku.edu.tw},
abstractNote = {The electron field emission (EFE) properties of ultrananocrystalline diamond films were markedly improved via the bias-enhanced plasma post-treatment (bep) process. The bep-process induced the formation of hybrid-granular structure of the diamond (bep-HiD) films with abundant nano-graphitic phase along the grain boundaries that increased the conductivity of the films. Moreover, the utilization of Au-interlayer can effectively suppress the formation of resistive amorphous-carbon (a-C) layer, thereby enhancing the transport of electrons crossing the diamond-to-Si interface. Therefore, bep-HiD/Au/Si films exhibit superior EFE properties with low turn-on field of E{sub 0} = 2.6 V/μm and large EFE current density of J{sub e} = 3.2 mA/cm{sup 2} (at 5.3 V/μm)},
doi = {10.1063/1.4915488},
url = {https://www.osti.gov/biblio/22395747},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 11,
volume = 106,
place = {United States},
year = {Mon Mar 16 00:00:00 EDT 2015},
month = {Mon Mar 16 00:00:00 EDT 2015}
}