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Title: Directional luminescence control of InGaN/GaN heterostructures using quantum structure lattice arrays

The spontaneous surface luminescence properties of InGaN/GaN quantum structure lattice (QSL) are reported. The QSL consists of a two-dimensional array of InGaN/GaN quantum boxes (QBs) arranged in a rectangular pattern of 200 nm periodicity. The measured angular dependent photoluminescence (PL) spectra show a strong dependence on the in-plane Bragg diffractions between QBs. The maximum PL intensity of the InGaN/GaN QSL array that fulfill the Bragg condition points in the normal direction of the sample surface with a narrow radiation angle of ∼ ±12°. In addition, a small side lobe is also shown at ±40°. For the QSL sample that does not fulfill the Bragg diffraction condition, the radiation pattern shows a conventional cosine distribution. The finite-difference time-domain numerical analysis confirms that the lowest order and higher order Bragg diffractions between QBs determine the main and the small side lobe of the radiation pattern measured in QSLs, respectively.
Authors:
; ; ; ;  [1] ; ;  [1] ;  [2]
  1. Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
  2. (China)
Publication Date:
OSTI Identifier:
22395744
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BRAGG REFLECTION; GALLIUM NITRIDES; INDIUM COMPOUNDS; NUMERICAL ANALYSIS; PERIODICITY; PHOTOLUMINESCENCE; SURFACES; TWO-DIMENSIONAL CALCULATIONS; TWO-DIMENSIONAL SYSTEMS