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Title: High-power blue laser diodes with indium tin oxide cladding on semipolar (202{sup ¯}1{sup ¯}) GaN substrates

We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (202{sup ¯}1{sup ¯}) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451 nm at room temperature, an output power of 2.52 W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34 A. The measured differential quantum efficiency was 50%.
Authors:
; ; ;  [1] ; ;  [1] ;  [2]
  1. Materials Department, University of California, Santa Barbara, California 93106 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22395741
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CLADDING; COMPARATIVE EVALUATIONS; GALLIUM NITRIDES; INDIUM COMPOUNDS; LASERS; LAYERS; QUANTUM EFFICIENCY; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TIN OXIDES; WAVEGUIDES; WAVELENGTHS