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Title: Metal insulator semiconductor solar cell devices based on a Cu{sub 2}O substrate utilizing h-BN as an insulating and passivating layer

We demonstrate cuprous oxide (Cu{sub 2}O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu{sub 2}O layer. The devices are the most efficient of any Cu{sub 2}O based MIS-Schottky solar cells reported to date.
Authors:
; ; ;  [1] ;  [2] ;  [2] ;  [1] ;  [2]
  1. Department of Physics, University of California at Berkeley, Berkeley, California 94720 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22395735
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BORON NITRIDES; COPPER OXIDES; CRYSTAL GROWTH; ENERGY EFFICIENCY; FABRICATION; LAYERS; MIS SOLAR CELLS; PASSIVATION; SEMICONDUCTOR MATERIALS; SUBSTRATES