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Title: Direct fabrication of thin layer MoS{sub 2} field-effect nanoscale transistors by oxidation scanning probe lithography

Thin layer MoS{sub 2}-based field effect transistors (FET) are emerging candidates to fabricate very fast and sensitive devices. Here, we demonstrate a method to fabricate very narrow transistor channel widths on a single layer MoS{sub 2} flake connected to gold electrodes. Oxidation scanning probe lithography is applied to pattern insulating barriers on the flake. The process narrows the electron path to about 200 nm. The output and transfer characteristics of the fabricated FET show a behavior that is consistent with the minimum channel width of the device. The method relies on the direct and local chemical modification of MoS{sub 2}. The straightforward character and the lack of specific requirements envisage the controlled patterning of sub-100 nm electron channels in MoS{sub 2} FETs.
Authors:
; ;  [1] ; ; ;  [2]
  1. Instituto de Ciencia de Materiales, CSIC, Sor Juana Inés de la Cruz 3, Madrid (Spain)
  2. École Polytechnique Fédérale de Lausanne, LANES, Station 17, Lausanne (Switzerland)
Publication Date:
OSTI Identifier:
22395731
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DIFFUSION BARRIERS; ELECTRODES; ELECTRONS; FABRICATION; FIELD EFFECT TRANSISTORS; GOLD; MASKING; MOLYBDENUM SULFIDES; NANOSTRUCTURES; OXIDATION; PROBES; THIN FILMS