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Title: Enhancement of ambipolar characteristics in single-walled carbon nanotubes using C{sub 60} and fabrication of logic gates

We demonstrate a technique to convert p-type single-walled carbon nanotube (SWNT) network transistor into ambipolar transistor by thermally evaporating C{sub 60} on top. The addition of C{sub 60} was observed to have two effects in enhancing ambipolar characteristics. First, C{sub 60} served as an encapsulating layer that enhanced the ambipolar characteristics of SWNTs. Second, C{sub 60} itself served as an electron transporting layer that contributed to the n-type conduction. Such a dual effect enables effective conversion of p-type into ambipolar characteristics. We have fabricated inverters using our SWNT/C{sub 60} ambipolar transistors with gain as high as 24, along with adaptive NAND and NOR logic gates.
Authors:
 [1] ;  [2] ; ; ;  [3]
  1. Department of Materials Science and Engineering, Stanford University, Durand Building, 496 Lomita Mall, Stanford, California 94305-4034 (United States)
  2. Department of Electrical Engineering, Stanford University, David Packard Building, 350 Serra Mall, Mail Code: 9505, Stanford, California 94305-9505 (United States)
  3. Department of Chemical Engineering, Stanford University, Shriram Center, 443 Via Ortega, Room 307, Stanford, California 94305-4145 (United States)
Publication Date:
OSTI Identifier:
22395730
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CARBON NANOTUBES; CONVERSION; ELECTRIC CONDUCTIVITY; ELECTRONS; FABRICATION; FULLERENES; GAIN; INVERTERS; LAYERS; LOGIC CIRCUITS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; TRANSISTORS