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Title: Electrostatically transparent graphene quantum-dot trap layers for efficient nonvolatile memory

In this study, we have demonstrated nonvolatile memory devices using graphene quantum-dots (GQDs) trap layers with indium zinc oxide (IZO) semiconductor channel. The Fermi-level of GQD was effectively modulated by tunneling electrons near the Dirac point because of limited density of states and weak electrostatic screening in monolayer graphene. As a result, large gate modulation was driven in IZO channel to achieve a subthreshold swing of 5.21 V/dec (300 nm SiO{sub 2} gate insulator), while Au quantum-dots memory shows 15.52 V/dec because of strong electrostatic screening in metal quantum-dots. Together, discrete charge traps of GQDs enable stable performance in the endurance test beyond 800 cycles of programming and erasing. Our study suggests the exciting potential of GQD trap layers to be used for a highly promising material in non-volatile memory devices.
Authors:
; ; ;  [1] ; ; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
  2. (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
  3. Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
  4. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22395724
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; DENSITY OF STATES; ELECTRONS; FERMI LEVEL; GRAPHENE; INDIUM COMPOUNDS; LAYERS; MEMORY DEVICES; MODULATION; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SILICON OXIDES; TRAPS; TUNNEL EFFECT; ZINC OXIDES