skip to main content

Title: Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.
Authors:
 [1] ;  [2] ; ;  [3] ;  [1] ;  [4] ;  [5] ;  [1] ;  [6]
  1. Department of Electrical Engineering, University of California Los Angeles, Los Angeles, California 90095 (United States)
  2. (China)
  3. California NanoSystems Institute, University of California Los Angeles, Los Angeles, California 90095 (United States)
  4. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
  5. Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)
  6. (United States)
Publication Date:
OSTI Identifier:
22395723
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; COMPARATIVE EVALUATIONS; ELECTRONS; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; HOLES; INDIUM ARSENIDES; MATRIX MATERIALS; MOLECULAR BEAM EPITAXY; PERFORMANCE; PHOTOLUMINESCENCE; QUANTUM DOTS; SOLAR CELLS; TIME RESOLUTION