Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

Journal Article · Mon Mar 09 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4914895· OSTI ID:22395723

Ji, Hai-Ming ^[1]; Liang, Baolai; Simmonds, Paul J. ^[2]; Juang, Bor-Chau ^[1]; Yang, Tao ^[3]; Young, Robert J. ^[4]; Huffaker, Diana L. ^[1]

---

1. Department of Electrical Engineering, University of California Los Angeles, Los Angeles, California 90095 (United States)
2. California NanoSystems Institute, University of California Los Angeles, Los Angeles, California 90095 (United States)
3. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
4. Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

• OSTI ID: 22395723
• Journal Information: Applied Physics Letters, Vol. 106, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
COMPARATIVE EVALUATIONS
ELECTRONS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
HOLES
INDIUM ARSENIDES
MATRIX MATERIALS
MOLECULAR BEAM EPITAXY
PERFORMANCE
PHOTOLUMINESCENCE
QUANTUM DOTS
SOLAR CELLS
TIME RESOLUTION