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Title: Nanosized perpendicular organic spin-valves

A fabrication process for perpendicular organic spin-valve devices based on the organic semiconductor Alq3 has been developed which offers the possibility to achieve active device areas of less than 500 × 500 nm{sup 2} and is flexible in terms of material choice for the active layers. Characterization of the resulting devices shows a large magnetoresistance of sometimes more than 100%, however with equally large variation from device to device. Comparison with large area spin-valves indicates that the magnetoresistance of both large and small devices most likely originates from tunneling through pinholes and tunneling magnetoresistance.
Authors:
; ; ;  [1] ;  [2] ;  [1] ;  [3]
  1. Institut für Physik, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany)
  2. Interdisziplinäres Zentrum für Materialwissenschaften, Martin Luther University Halle-Wittenberg, 06099 Halle (Saale) (Germany)
  3. (Saale) (Germany)
Publication Date:
OSTI Identifier:
22395715
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; COMPARATIVE EVALUATIONS; FABRICATION; MAGNETORESISTANCE; NANOSTRUCTURES; ORGANIC SEMICONDUCTORS; SPIN; TUNNEL EFFECT; VALVES; VARIATIONS