Investigation of dislocations in Nb-doped SrTiO{sub 3} by electron-beam-induced current and transmission electron microscopy
- WPI Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044 (Japan)
- Fukushima Renewable Energy Institute, Koriyama 963-0215 (Japan)
- Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
- Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190 (China)
- Department of Electrical and Electronic Engineering, Meiji University, Kawasaki 214-8571 (Japan)
This paper aims to clarify the electrical activities of dislocations in Nb-doped SrTiO{sub 3} substrates and the role of dislocations in the resistance switching phenomenon in Pt/SrTiO{sub 3} Schottky contacts. The electrical activities of dislocations have been studied by electron-beam-induced current (EBIC) technique. EBIC has found that dislocations can exhibit dark or bright contrast depending on their character and band bending condition. The character of dislocations has been analysed based on chemical etching and transmission electron microscopy. These data suggested that not all the dislocations contribute to the switching phenomenon. The active dislocations for resistance switching were discussed.
- OSTI ID:
- 22395712
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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