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Title: Investigation of dislocations in Nb-doped SrTiO{sub 3} by electron-beam-induced current and transmission electron microscopy

This paper aims to clarify the electrical activities of dislocations in Nb-doped SrTiO{sub 3} substrates and the role of dislocations in the resistance switching phenomenon in Pt/SrTiO{sub 3} Schottky contacts. The electrical activities of dislocations have been studied by electron-beam-induced current (EBIC) technique. EBIC has found that dislocations can exhibit dark or bright contrast depending on their character and band bending condition. The character of dislocations has been analysed based on chemical etching and transmission electron microscopy. These data suggested that not all the dislocations contribute to the switching phenomenon. The active dislocations for resistance switching were discussed.
Authors:
;  [1] ;  [2] ;  [3] ;  [4] ;  [5]
  1. WPI Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044 (Japan)
  2. Fukushima Renewable Energy Institute, Koriyama 963-0215 (Japan)
  3. Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
  4. Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190 (China)
  5. Department of Electrical and Electronic Engineering, Meiji University, Kawasaki 214-8571 (Japan)
Publication Date:
OSTI Identifier:
22395712
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BENDING; DISLOCATIONS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ETCHING; PLATINUM; SCANNING ELECTRON MICROSCOPY; STRONTIUM TITANATES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY