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Title: Energy level of the Si-related DX-center in (Al{sub y}Ga{sub 1−y}){sub 1−x}In{sub x}As

For the quaternary material (Al{sub y}Ga{sub 1−y}){sub 1−x}In{sub x}As, the energy level of the silicon-related deep electron trap known as the DX-center is calculated. In addition, the composition range y(x) is derived, for which the silicon-related DX-center level is below the conduction band minimum and thus electronically active. Eventually, the result of the calculation is compared with available measurement data, revealing good agreement regarding the composition when the DX-center energy level crosses the conduction band minimum.
Authors:
; ;  [1]
  1. Fraunhofer ISE, Heidenhofstr. 2, 79110 Freiburg (Germany)
Publication Date:
OSTI Identifier:
22395707
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; ALUMINIUM COMPOUNDS; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; ELECTRONS; ENERGY LEVELS; GALLIUM ARSENIDES; INDIUM COMPOUNDS; SILICON; TRAPS; X-RAY SPECTROSCOPY