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Title: Transition from semiconducting to metallic-like conducting and weak antilocalization effect in single crystals of LuPtSb

High quality half-Heusler single crystals of LuPtSb have been synthesized by a Pb flux method. The temperature dependent resistivity and Hall effects indicate that the LuPtSb crystal is a p-type gapless semiconductor showing a transition from semiconducting to metallic conducting at 150 K. Moreover, a weakly temperature-dependent positive magnetoresistance (MR) as large as 109% and high carrier mobility up to 2950 cm{sup 2}/V s are experimentally observed at temperatures below 150 K. The low-field MR data show evidence for weak antilocalization (WAL) effect at temperatures even up to 150 K. Analysis of the temperature and angle dependent magnetoconductance manifests that the WAL effect originates from the bulk contribution owing to the strong spin-orbital coupling.
Authors:
 [1] ;  [2] ; ; ; ; ; ; ;  [1] ;  [3] ;  [4]
  1. State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
  2. (China)
  3. College of Physics, Jilin University, Changchun 130023 (China)
  4. State Key Laboratory of Metastable Material Sciences and Technology, Yanshan University, Qinhuangdao 066004 (China)
Publication Date:
OSTI Identifier:
22395706
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANTIMONIDES; CARRIER MOBILITY; HALL EFFECT; L-S COUPLING; LUTETIUM COMPOUNDS; MAGNETORESISTANCE; MONOCRYSTALS; PLATINUM COMPOUNDS; P-TYPE CONDUCTORS; TEMPERATURE DEPENDENCE