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Title: Correlation of a generation-recombination center with a deep level trap in GaN

We report on the identification of a deep level trap centre which contributes to generation-recombination noise. A n-GaN epilayer, grown by MOCVD on sapphire, was measured by deep level transient spectroscopy (DLTS) and noise spectroscopy. DLTS found 3 well documented deep levels at E{sub c} − 0.26 eV, E{sub c} − 0.59 eV, and E{sub c} − 0.71 eV. The noise spectroscopy identified a generation recombination centre at E{sub c} − 0.65 ± 0.1 eV with a recombination lifetime of 65 μs at 300 K. This level is considered to be the same as the one at E{sub c} − 0.59 eV measured from DLTS, as they have similar trap densities and capture cross section. This result shows that some deep levels contribute to noise generation in GaN materials.
Authors:
 [1] ;  [2] ; ; ;  [3] ; ;  [4] ;  [1] ;  [5] ;  [1] ;  [6] ;  [6]
  1. Low energy electronic system IRG, Singapore MIT Alliance for Research and Technology Center, 1 CREATE way, Singapore 138602 (Singapore)
  2. Institute of Materials Research and Engineering, 3, Research Link, Singapore 117602 (Singapore)
  3. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
  4. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
  5. (United States)
  6. (Singapore)
Publication Date:
OSTI Identifier:
22395705
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPTURE; CHEMICAL VAPOR DEPOSITION; CORRELATIONS; CROSS SECTIONS; DEEP LEVEL TRANSIENT SPECTROSCOPY; EV RANGE; GALLIUM NITRIDES; LIFETIME; N-TYPE CONDUCTORS; RECOMBINATION; SAPPHIRE; TRAPS