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Title: On the impact of indium distribution on the electronic properties in InGaN nanodisks

We analyze an epitaxially grown heterostructure composed of InGaN nanodisks inserted in GaN nanowires in order to relate indium concentration to the electronic properties. This study was achieved with spatially resolved low-loss electron energy-loss spectroscopy using monochromated electrons to probe optical excitations—plasmons—at nanometer scale. Our findings show that each nanowire has its own indium fluctuation and therefore its own average composition. Due to this indium distribution, a scatter is obtained in plasmon energies, and therefore in the optical dielectric function, of the nanowire ensemble. We suppose that these inhomogeneous electronic properties significantly alter band-to-band transitions and consequently induce emission broadening. In addition, the observation of tailing indium composition into the GaN barrier suggests a graded well-barrier interface leading to further inhomogeneous broadening of the electro-optical properties. An improvement in the indium incorporation during growth is therefore needed to narrow the emission linewidth of the presently studied heterostructures.
Authors:
 [1] ; ;  [2] ; ;  [3] ;  [4] ; ;  [5]
  1. LMPHE, Physics Department, Faculté des Sciences, Université Mohammed V, 4 Avenue Ibn Batouta, B.P. 1014 RP, 10000 Rabat (Morocco)
  2. Max Planck Institute for Intelligent Systems, Heisenbergstraße 3, 70569 Stuttgart (Germany)
  3. Photonics Laboratory, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia)
  4. LPMR, Université Mohammed Premier, B.P. 717, 60000 Oujda (Morocco)
  5. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)
Publication Date:
OSTI Identifier:
22395704
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CONCENTRATION RATIO; DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; ELECTRONS; EMISSION; ENERGY-LOSS SPECTROSCOPY; EPITAXY; FLUCTUATIONS; GALLIUM NITRIDES; INDIUM COMPOUNDS; INTERFACES; NANOWIRES; OPTICAL PROPERTIES; PLASMONS