skip to main content

Title: Elimination of trench defects and V-pits from InGaN/GaN structures

The microstructural evolution of InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor phase epitaxy was studied as a function of the growth temperature of the GaN quantum barriers (QBs). We observed the formation of basal stacking faults (BSFs) in GaN QBs grown at low temperature. The presence of BSFs terminated by stacking mismatch boundaries (SMBs) leads to the opening of the structure at the surface into a V-shaped trench loop. This trench may form above an SMB, thereby terminating the BSF, or above a junction between the SMB and a subsequent BSF. Fewer BSFs and thus fewer trench defects were observed in GaN QBs grown at temperatures higher than 830 °C. Further increase in the growth temperature of the GaN QBs led to the suppression of the threading dislocation opening into V-pits.
Authors:
; ; ; ;  [1]
  1. Institute of High Pressure Physics, Polish Academy of Science, Sokolowska 29/37, 01-142 Warsaw, Poland and TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22395702
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; DISLOCATIONS; ELECTRIC CONTACTS; GALLIUM NITRIDES; MICROSTRUCTURE; QUANTUM WELLS; SEMICONDUCTOR JUNCTIONS; STACKING FAULTS; SURFACES; TEMPERATURE DEPENDENCE; VAPOR PHASE EPITAXY