Narrow-line self-assembled GaAs quantum dots for plasmonics
- Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, D-01069 Dresden (Germany)
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart (Germany)
- Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)
- Institute of Semiconductor and Solid-State Physics, Johannes Kepler University Linz, Altenbergerstrasse 69, A-4040 Linz (Austria)
We demonstrate efficient coupling of excitons in near-surface GaAs quantum dots (QDs) to surface-plasmon polaritons. We observe distinct changes in the photoluminescence of the emitters as the distance between the QDs and the gold interface decreases. Based on an electric point-dipole model, we identify the surface plasmon launching rates for different QD-surface distances. While in conventional far-field experiments only a few percent of the emitted photons can be collected due to the high refractive index semiconductor substrate, already for distances around 30 nm the plasmon launching-rate becomes comparable to the emission rate into bulk photon modes, thus much larger than the photon collection rate. For even smaller distances, the degrading optical properties of the emitter counterweight the increasing coupling efficiency to plasmonic modes.
- OSTI ID:
- 22395694
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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