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Title: GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-μm

We have investigated in detail the material, optical, and lasing properties of innovative GaInSb/AlInSb composite quantum wells (CQWs). The CQWs are confined by AlGaAsSb barrier layers, and a monolayer-thin AlInSb barrier layer has been inserted within the GaInSb QWs in order to achieve lasing emission within the telecom window. High-resolution X-ray diffraction, transmission electron microscopy, and photoluminescence spectroscopies reveal high structural quality of the samples. Inserting AlInSb layers allows wider QWs, and thus higher gain-material volume and CQW/optical mode overlap. This translates into better laser performances. Near room temperature, a threshold current of 85 mA and an output power of ∼30 mW/uncoated-facet under continuous wave operation are demonstrated at 1.55 μm with 10 μm × 1 mm laser diodes.
Authors:
; ; ;  [1] ;  [2] ;  [1] ;  [2] ;  [2] ; ; ;  [3] ; ;  [4] ;  [5]
  1. Université de Montpellier, IES, UMR 5214, F-34000 Montpellier (France)
  2. (France)
  3. CNRS, LPN, UPR 20, F-91460 Marcoussis (France)
  4. INSA-CNRS-UPS, LPCNO, Université de Toulouse, 135 Av. de Rangueil, F-31077 Toulouse (France)
  5. III-V lab, F-91460 Marcoussis (France)
Publication Date:
OSTI Identifier:
22395688
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM COMPOUNDS; DEPLETION LAYER; EMISSION SPECTROSCOPY; GAIN; GALLIUM ANTIMONIDES; INDIUM ANTIMONIDES; OPERATION; OPTICAL MODES; PERFORMANCE; PHOTOLUMINESCENCE; QUANTUM WELLS; RESOLUTION; TEMPERATURE RANGE 0273-0400 K; THRESHOLD CURRENT; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION