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Title: On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements

III-nitride light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Auger recombination is often seen as primary cause of this droop phenomenon. The corresponding Auger recombination coefficient C is typically obtained from efficiency measurements using mathematical models. However, C coefficients reported for InGaN active layers vary over two orders of magnitude. We here investigate this uncertainty and apply successively more accurate models to the same efficiency measurement, thereby revealing the strong sensitivity of the Auger coefficient to quantum well properties such as electron-hole ratio, electric field, and hot carrier escape.
Authors:
 [1] ; ;  [2]
  1. NUSOD Institute LLC, Newark, Delaware 19714-7204 (United States)
  2. Department of Electrical Engineering, University of Kassel, 34121 Kassel (Germany)
Publication Date:
OSTI Identifier:
22395687
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; AUGER EFFECT; CHARGE CARRIERS; EFFICIENCY; ELECTRIC FIELDS; GALLIUM NITRIDES; HOLES; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; QUANTUM WELLS; RECOMBINATION; SENSITIVITY