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Title: Low-bias negative differential resistance effect in armchair graphene nanoribbon junctions

Graphene nanoribbons with armchair edges (AGNRs) have bandgaps that can be flexibly tuned via the ribbon width. A junction made of a narrower AGNR sandwiched between two wider AGNR leads was recently reported to possess two perfect transmission channels close to the Fermi level. Here, we report that by using a bias voltage to drive these transmission channels into the gap of the wider AGNR lead, we can obtain a negative differential resistance (NDR) effect. Owing to the intrinsic properties of the AGNR junctions, the on-set bias reaches as low as ∼0.2 V and the valley current almost vanishes. We further show that such NDR effect is robust against details of the atomic structure of the junction, substrate, and whether the junction is made by etching or by hydrogenation.
Authors:
 [1] ;  [2] ;  [2] ;  [3] ;  [4] ;  [1] ;  [2] ;  [1] ;  [2]
  1. Department of Physics, Center for Advanced 2D Materials and Graphene Research Center, National University of Singapore, 2 Science Drive 3, Singapore 117551 (Singapore)
  2. (Singapore)
  3. Institute of High Performance Computing, Agency for Science, Technology and Research, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore)
  4. Korea Institute for Advanced Study, Seoul 130-722 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22395675
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ETCHING; FERMI LEVEL; GRAPHENE; HYDROGENATION; NANOSTRUCTURES; SEMICONDUCTOR JUNCTIONS; SUBSTRATES