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Title: Nitrogen-doped graphene films from simple photochemical doping for n-type field-effect transistors

Highly nitrogen-doped GO (NGO) and n-type graphene field effect transistor (FET) have been achieved by simple irradiation of graphene oxide (GO) thin films in NH{sub 3} atmosphere. The electrical properties of the NGO film were performed on electric field effect measurements, and it displays an n-type FET behavior with a charge neutral point (Dirac point) located at around −8 V. It is suggested that the amino-like nitrogen (N-A) mainly contributes to the n-type behavior. Furthermore, compared to the GO film irradiated in Ar atmosphere, the NGO film is much more capable to improve the electrical conductivity. It may attribute to nitrogen doping and oxygen reduction, both of which can effectively enhance the electrical conductivity.
Authors:
 [1] ;  [2] ; ;  [1] ;  [3]
  1. College of Science, Guilin University of Technology, Guilin 541004 (China)
  2. (China)
  3. School of Materials Science and Engineering, Nanjing Institute of Technology, Nanjing 211167 (China)
Publication Date:
OSTI Identifier:
22395671
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMMONIA; ATMOSPHERES; CARBON OXIDES; COMPARATIVE EVALUATIONS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; GRAPHENE; IRRADIATION; NITROGEN; N-TYPE CONDUCTORS; OXYGEN; PHOTOCHEMISTRY; THIN FILMS