skip to main content

SciTech ConnectSciTech Connect

Title: Ex post manipulation of barriers in InGaAs tunnel injection devices

Ex post manipulation of ∼1.1 μm emitting InGaAs/GaAs-based quantum dot–quantum well tunnel injection light emitting devices is demonstrated experimentally. The devices were operated at elevated forward currents until irreversible alterations were observed. As a result, changes in the steady-state optical spectra (electroluminescence, photoluminescence, and photocurrent), in carrier kinetics, in transport properties, and real structure are found. Except for degradation effects, e.g., of larger quantum dots, also restoration/annealing effects such as increased tunnel barriers are observed. The results furnish evidence for a generic degradation mode of nanostructures. We qualitatively interpret the mechanisms involved on both the nanoscopic and the device scales.
Authors:
 [1] ;  [2] ;  [3] ;  [2] ;  [3] ;  [4] ;  [1] ;  [5]
  1. Max Planck Institute of Microstructure Physics, 06120 Halle (Saale) (Germany)
  2. (Russian Federation)
  3. Fock Institute of Physics, St. Petersburg State University, St. Petersburg 198504 (Russian Federation)
  4. Interdisciplinary Center of Materials Science, Martin Luther University, 06120 Halle (Germany)
  5. Max Born Institut für Nichtlineare Optik und Kurzzeitspektroskopie, 12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22395666
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ANNEALING; CHARGE CARRIERS; ELECTROLUMINESCENCE; GALLIUM ARSENIDES; INDIUM ARSENIDES; PHOTOLUMINESCENCE; QUANTUM DOTS; QUANTUM WELLS; STEADY-STATE CONDITIONS; VISIBLE RADIATION