Auger recombination in In(Ga)Sb/InAs quantum dots
- School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, S-164 40 Kista (Sweden)
- Acreo AB, Electrum 236. 16440 Kista (Sweden)
We report on the epitaxial formation of type II In{sub 0.5}Ga{sub 0.5}Sb/InAs and InSb/InAs quantum dot ensembles using metal organic vapor phase epitaxy. Employing scanning tunneling spectroscopy, we determine spatial quantum dot dimensions smaller than the de Broglie wavelength of InGaSb, which strongly indicates a three dimensional hole confinement. Photoluminescence spectroscopy at low temperatures yields an enhanced radiative recombination in the mid-infrared regime at energies of 170–200 meV. This luminescence displays a strong excitation power dependence with a blueshift indicating a filling of excited quantum dot hole states. Furthermore, a rate equation model is used to extract the Auger recombination coefficient from the power dependent intensity at 77 K yielding values of 1.35 × 10{sup −28} cm{sup 6}/s for In{sub 0.5}Ga{sub 0.5}Sb/InAs quantum dots and 1.47 × 10{sup −27} cm{sup 6}/s for InSb/InAs quantum dots, which is about one order of magnitude lower as previously obtained values for InGaSb superlattices.
- OSTI ID:
- 22395665
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
DE BROGLIE WAVELENGTH
EMISSION SPECTROSCOPY
EXCITATION
GALLIUM COMPOUNDS
HOLES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
QUANTUM DOTS
REACTION KINETICS
RECOMBINATION
SUPERLATTICES
THREE-DIMENSIONAL LATTICES
TUNNEL EFFECT
VAPOR PHASE EPITAXY