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Title: Auger recombination in In(Ga)Sb/InAs quantum dots

We report on the epitaxial formation of type II In{sub 0.5}Ga{sub 0.5}Sb/InAs and InSb/InAs quantum dot ensembles using metal organic vapor phase epitaxy. Employing scanning tunneling spectroscopy, we determine spatial quantum dot dimensions smaller than the de Broglie wavelength of InGaSb, which strongly indicates a three dimensional hole confinement. Photoluminescence spectroscopy at low temperatures yields an enhanced radiative recombination in the mid-infrared regime at energies of 170–200 meV. This luminescence displays a strong excitation power dependence with a blueshift indicating a filling of excited quantum dot hole states. Furthermore, a rate equation model is used to extract the Auger recombination coefficient from the power dependent intensity at 77 K yielding values of 1.35 × 10{sup −28} cm{sup 6}/s for In{sub 0.5}Ga{sub 0.5}Sb/InAs quantum dots and 1.47 × 10{sup −27} cm{sup 6}/s for InSb/InAs quantum dots, which is about one order of magnitude lower as previously obtained values for InGaSb superlattices.
Authors:
; ; ; ; ; ; ; ;  [1] ; ;  [2]
  1. School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, S-164 40 Kista (Sweden)
  2. Acreo AB, Electrum 236. 16440 Kista (Sweden)
Publication Date:
OSTI Identifier:
22395665
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; DE BROGLIE WAVELENGTH; EMISSION SPECTROSCOPY; EXCITATION; GALLIUM COMPOUNDS; HOLES; INDIUM ANTIMONIDES; INDIUM ARSENIDES; ORGANOMETALLIC COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM DOTS; REACTION KINETICS; RECOMBINATION; SUPERLATTICES; THREE-DIMENSIONAL LATTICES; TUNNEL EFFECT; VAPOR PHASE EPITAXY