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Title: Impact of total ionizing dose irradiation on Pt/SrBi{sub 2}Ta{sub 2}O{sub 9}/HfTaO/Si memory capacitors

In this work, metal-ferroelectric-insulator-semiconductor (MFIS) structure capacitors with SrBi{sub 2}Ta{sub 2}O{sub 9} (300 nm) as ferroelectric thin film and HfTaO (6 nm, 8 nm, 10 nm, and 12 nm) as insulating buffer layer were proposed and investigated. The prepared capacitors were fabricated and characterized before radiation and then subjected to {sup 60}Co gamma irradiation in steps of two dose levels. Significant irradiation-induced degradation of the electrical characteristics was observed. The radiation experimental results indicated that stability and reliability of as-fabricated MFIS capacitors for nonvolatile memory applications could become uncontrollable under strong irradiation dose and/or long irradiation time.
Authors:
; ; ;  [1] ;  [2] ;  [2] ; ;  [3] ;  [4] ; ; ; ;  [1]
  1. School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105 (China)
  2. (China)
  3. Northwest Institute of Nuclear Technology, Xi'an, Shanxi 710024 (China)
  4. The School of Mathematics and Computational Science, Xiangtan University, Xiangtan, Hunan 411105 (China)
Publication Date:
OSTI Identifier:
22395659
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BISMUTH COMPOUNDS; CAPACITORS; COBALT 60; FERROELECTRIC MATERIALS; GAMMA RADIATION; HAFNIUM COMPOUNDS; IRRADIATION; LAYERS; PHASE STABILITY; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SEMICONDUCTOR MATERIALS; STRONTIUM COMPOUNDS; TANTALATES; THIN FILMS