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Title: Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands

Compositional atomic ordering is a crucial issue in the epitaxial growth of nanoparticles and thin films. Here, we report on a method based on x-ray diffuse scattering close to basis forbidden Bragg reflections to infer the lateral location, the symmetry, and the thermal stability of ordered domains in GeSi dome-shaped islands on Si(001) after growth and during annealing. We observe that atomic ordering does not disappear after annealing, demonstrating that it is a resilient metastable phenomenon.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [2] ;  [6] ;  [4] ;  [7] ;  [8]
  1. Faculté des Sciences de St Jérôme, IM2NP-CNRS, Aix-Marseille University, 13397 Marseille (France)
  2. (France)
  3. Departamento de Física, Universidade Federal de Minas Gerais, CEP 31270-901 Belo Horizonte, MG (Brazil)
  4. ID01/ESRF, 6 rue Jules Horowitz, BP220, F-38043 Grenoble Cedex (France)
  5. INAC-SP2M, University Grenoble Alpes, F-38000 Grenoble (France)
  6. Department of Physics, Fudan University, Shanghai 200433 (China)
  7. (Germany)
  8. CEA, INAC-SP2M, F-38000 Grenoble (France)
Publication Date:
OSTI Identifier:
22395649
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; BRAGG REFLECTION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DIFFUSE SCATTERING; DOMAIN STRUCTURE; EPITAXY; GERMANIUM SILICIDES; INDIUM FLUORIDES; NANOPARTICLES; PHASE STABILITY; SILICON; SYMMETRY; THIN FILMS; X RADIATION; X-RAY DIFFRACTION