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Title: Radial InP/InAsP/InP heterostructure nanowires on patterned Si substrates using self-catalyzed growth for vertical-type optical devices

Radial InP/InAsP/InP heterostructure nanowires (NWs) on SiO{sub 2}-mask-pattered Si substrates were reported using self-catalyzed InP NWs. Self-catalyzed growth was performed using low growth temperatures and high group-III flow rates, and vertical InP NWs were formed on the mask openings. The diameter and tapering of the self-catalyzed InP NWs were controlled by the introduction of HCl and H{sub 2}S gases during the NW growth, and InP NWs that have a straight region with decreased diameter were formed. Radial InP/InAsP/InP quantum wells (QWs) were grown on the sidewall of the vertical InP NWs on Si substrates. Room-temperature photoluminescence of single NWs from the QW was clearly observed, which exhibited the potential of building blocks for vertical-type optical devices on Si substrates.
Authors:
 [1] ; ; ; ;  [2] ;  [1] ;  [3]
  1. Institute for Nano Quantum Information Electronics (NanoQuine), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
  2. Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197 (Japan)
  3. (IIS), The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
Publication Date:
OSTI Identifier:
22395648
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ARSENIC COMPOUNDS; FLOW RATE; HYDROCHLORIC ACID; HYDROGEN SULFIDES; INDIUM PHOSPHIDES; NANOWIRES; PHOTOLUMINESCENCE; QUANTUM WELLS; SILICA; SILICON; SILICON OXIDES; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K