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Title: Thickness modulated MoS{sub 2} grown by chemical vapor deposition for transparent and flexible electronic devices

Two-dimensional (2D) materials have been a great interest as high-performance transparent and flexible electronics due to their high crystallinity in atomic thickness and their potential for variety applications in electronics and optoelectronics. The present study explored the wafer scale production of MoS{sub 2} nanosheets with layer thickness modulation from single to multi-layer by using two-step method of metal deposition and CVD process. The formation of high-quality and layer thickness-modulated MoS{sub 2} film was confirmed by Raman spectroscopy, AFM, HRTEM, and photoluminescence analysis. The layer thickness was identified by employing a simple method of optical contrast value. The image contrast in green (G) channel shows the best fit as contrast increases with layer thickness, which can be utilized in identifying the layer thickness of MoS{sub 2}. The presence of critical thickness of Mo for complete sulphurization, which is due to the diffusion limit of MoS{sub 2} transformation, changes the linearity of structural, electrical, and optical properties of MoS{sub 2}. High optical transparency of >90%, electrical mobility of ∼12.24 cm{sup 2} V{sup −1} s{sup −1}, and I{sub on/off} of ∼10{sup 6} characterized within the critical thickness make the MoS{sub 2} film suitable for transparent and flexible electronics as compared to conventional amorphous silicon (a-Si)more » or organic films. The layer thickness modulated large scale MoS{sub 2} growth method in conjunction with the layer thickness identification by the nondestructive optical contrast will definitely trigger development of scalable 2D MoS{sub 2} films for transparent and flexible electronics.« less
Authors:
; ; ;  [1] ;  [2] ;  [3]
  1. Department of Materials Science and Engineering, University of North Texas, Denton, Texas 76201 (United States)
  2. Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080-3021 (United States)
  3. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853 (United States)
Publication Date:
OSTI Identifier:
22395645
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; COMPARATIVE EVALUATIONS; DIFFUSION; FILMS; LAYERS; MODULATION; MOLYBDENUM SULFIDES; NANOSTRUCTURES; OPACITY; PHOTOLUMINESCENCE; POTENTIALS; RAMAN SPECTROSCOPY; SILICON; TRANSMISSION ELECTRON MICROSCOPY; TWO-DIMENSIONAL SYSTEMS