Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition

Halder, Nripendra N.; Biswas, Pranab; Nagabhushan, B.; Sarkar, Krishnendu; Chowdhury, Sisir; Chaudhuri, Arunava; Kundu, Souvik

doi:10.1063/1.4905345

Title: Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition

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Abstract

Growth of GaP capped strained InP quantum dots was carried out by metal organic chemical vapor deposition technique on Si (100) substrates to explore an alternative material system for photovoltaic conversion. Studies on reflectance spectroscopy show higher absorption of visible photons compared to scattering. Smooth and defect free interface provides low dark current with high rectification ratio. A solar cell made of five periods of quantum dots is found to provide a conversion efficiency of 4.18% with an open circuit voltage and short circuit current density of 0.52 V and 13.64 mA/cm{sup 2}, respectively, under AM 1.5 solar radiation.

Authors:

Halder, Nripendra N. ^[1]; Biswas, Pranab; Nagabhushan, B.; Sarkar, Krishnendu; Chowdhury, Sisir; Chaudhuri, Arunava ^[2]; Kundu, Souvik ^[3]

Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721 302 (India)
Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India)
Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)

Publication Date:: Mon Jan 05 00:00:00 EST 2015

OSTI Identifier:: 22395644

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 106; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; COMPARATIVE EVALUATIONS; CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRICAL FAULTS; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; INTERFACES; ORGANOMETALLIC COMPOUNDS; PHOTOVOLTAIC CONVERSION; QUANTUM DOTS; SILICON; SOLAR CELLS; STRAINS; SUBSTRATES; VISIBLE SPECTRA

Citation Formats


                    Halder, Nripendra N., Biswas, Pranab, Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in, Nagabhushan, B., Sarkar, Krishnendu, Chowdhury, Sisir, Chaudhuri, Arunava, and Kundu, Souvik. Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4905345.

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                    Halder, Nripendra N., Biswas, Pranab, Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in, Nagabhushan, B., Sarkar, Krishnendu, Chowdhury, Sisir, Chaudhuri, Arunava, & Kundu, Souvik. Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition.  United States.  https://doi.org/10.1063/1.4905345

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                    Halder, Nripendra N., Biswas, Pranab, Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in, Nagabhushan, B., Sarkar, Krishnendu, Chowdhury, Sisir, Chaudhuri, Arunava, and Kundu, Souvik. 2015.  
        "Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition".  United States.  https://doi.org/10.1063/1.4905345.

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@article{osti_22395644,

  title        = {Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition},

  author       = {Halder, Nripendra N. and Biswas, Pranab and Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in and Nagabhushan, B. and Sarkar, Krishnendu and Chowdhury, Sisir and Chaudhuri, Arunava and Kundu, Souvik},

  abstractNote = {Growth of GaP capped strained InP quantum dots was carried out by metal organic chemical vapor deposition technique on Si (100) substrates to explore an alternative material system for photovoltaic conversion. Studies on reflectance spectroscopy show higher absorption of visible photons compared to scattering. Smooth and defect free interface provides low dark current with high rectification ratio. A solar cell made of five periods of quantum dots is found to provide a conversion efficiency of 4.18% with an open circuit voltage and short circuit current density of 0.52 V and 13.64 mA/cm{sup 2}, respectively, under AM 1.5 solar radiation.},

  doi          = {10.1063/1.4905345},

  url          = {https://www.osti.gov/biblio/22395644},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 1,

  volume       = 106,

  place        = {United States},

  year         = {Mon Jan 05 00:00:00 EST 2015},

  month        = {Mon Jan 05 00:00:00 EST 2015}

}

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