skip to main content

SciTech ConnectSciTech Connect

Title: Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition

Growth of GaP capped strained InP quantum dots was carried out by metal organic chemical vapor deposition technique on Si (100) substrates to explore an alternative material system for photovoltaic conversion. Studies on reflectance spectroscopy show higher absorption of visible photons compared to scattering. Smooth and defect free interface provides low dark current with high rectification ratio. A solar cell made of five periods of quantum dots is found to provide a conversion efficiency of 4.18% with an open circuit voltage and short circuit current density of 0.52 V and 13.64 mA/cm{sup 2}, respectively, under AM 1.5 solar radiation.
Authors:
 [1] ; ; ; ; ; ;  [2] ;  [3]
  1. Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721 302 (India)
  2. Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India)
  3. Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)
Publication Date:
OSTI Identifier:
22395644
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; COMPARATIVE EVALUATIONS; CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRICAL FAULTS; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; INTERFACES; ORGANOMETALLIC COMPOUNDS; PHOTOVOLTAIC CONVERSION; QUANTUM DOTS; SILICON; SOLAR CELLS; STRAINS; SUBSTRATES; VISIBLE SPECTRA