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Title: Oxidized crystalline (3 × 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

The pre-oxidized crystalline (3×1)-O structure of InAs(100) has been recently found to significantly improve insulator/InAs junctions for devices, but the atomic structure and formation of this useful oxide layer are not well understood. We report high-resolution photoelectron spectroscopy analysis of (3×1)-O on InAs(100) and InSb(100). The findings reveal that the atomic structure of (3×1)-O consists of In atoms with unexpected negative (between −0.64 and −0.47 eV) and only moderate positive (In{sub 2}O type) core-level shifts; highly oxidized group-V sites; and four different oxygen sites. These fingerprint shifts are compared to those of previously studied oxides of III-V to elucidate oxidation processes.
Authors:
; ; ; ; ; ; ;  [1] ;  [1] ;  [2] ; ;  [3]
  1. Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland)
  2. (Russian Federation)
  3. The MAX IV Laboratory, Lund University, P.O. Box 118, SE-221 00 Lund (Sweden)
Publication Date:
OSTI Identifier:
22395638
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 1; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; COMPARATIVE EVALUATIONS; CRYSTAL STRUCTURE; ELECTRIC CONTACTS; EV RANGE; INDIUM ANTIMONIDES; INDIUM ARSENIDES; LAYERS; OXIDATION; OXIDES; OXYGEN; PHOTOELECTRON SPECTROSCOPY; RESOLUTION; SEMICONDUCTOR JUNCTIONS; SURFACES