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Title: Titanium-dioxide nanotube p-n homojunction diode

Application of semiconductors in functional optoelectronic devices requires precise control over their doping and formation of junction between p- and n-doped semiconductors. While doped thin films have led to several semiconductor devices, need for high-surface area nanostructured devices for photovoltaic, photoelectrochemical, and photocatalytic applications has been hindered by lack of desired doping in nanostructures. Here, we show titanium-dioxide (TiO{sub 2}) nanotubes doped with nitrogen (N) and niobium (Nb) as acceptors and donors, respectively, and formation of TiO{sub 2} nanotubes p-n homojunction. This TiO{sub 2}:N/TiO{sub 2}:Nb homojunction showed distinct diode-like behaviour with rectification ratio of 1115 at ±5 V and exhibited good photoresponse for ultraviolet light (λ = 365 nm) with sensitivity of 0.19 A/W at reverse bias of −5 V. These results can have important implications for development of nanostructured metal-oxide solar-cells, photodiodes, LED's, photocatalysts, and photoelectrochemical devices.
Authors:
; ;  [1] ;  [1] ;  [2] ;  [2]
  1. Department of Chemical and Biological Engineering, University of Colorado Boulder, 3415 Colorado Avenue, Boulder, Colorado 80303 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22395622
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; DOPED MATERIALS; ELECTRIC CONTACTS; NANOTUBES; NIOBIUM; NITROGEN; OPTOELECTRONIC DEVICES; PHOTOCATALYSIS; PHOTODIODES; PHOTOVOLTAIC EFFECT; P-N JUNCTIONS; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SURFACE AREA; THIN FILMS; TITANIUM OXIDES; ULTRAVIOLET RADIATION; VISIBLE RADIATION