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Title: Formation of GeSn alloy on Si(100) by low-temperature molecular beam epitaxy

GeSn alloys grown on Si(100) by the low-temperature (100 °C) molecular beam epitaxy are studied using scanning tunneling microscopy and Raman spectroscopy. It is found that the effect of Sn as a surfactant modifies substantially the low-temperature growth mechanism of Ge on Si. Instead of the formation of small Ge islands surrounded by amorphous Ge, in the presence of Sn, the growth of pure Ge islands appears via the Stranski-Krastanov growth mode, and a partially relaxed Ge{sub 1−x}Sn{sub x} alloy layer with the high Sn-fraction up to 40 at. % is formed in the area between them. It is shown that the observed growth mode induced by high surface mobility of Sn and the large strain of the pseudomorphic state of Ge to Si ensures the minimum elastic-strain energy of the structure.
Authors:
 [1] ;  [2] ;  [1]
  1. A. V. Rzhanov Institute of Semiconductor Physics, Lavrentyev Avenue 13, Novosibirsk 630090 (Russian Federation)
  2. (Russian Federation)
Publication Date:
OSTI Identifier:
22395619
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 26; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; CRYSTAL GROWTH; CRYSTAL STRUCTURE; GERMANIUM; INTERMETALLIC COMPOUNDS; LAYERS; MOLECULAR BEAM EPITAXY; RAMAN SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON; STRAINS; SURFACES; SURFACTANTS; TEMPERATURE DEPENDENCE; TIN